| PART |
Description |
Maker |
| HM62V8100I09 HM62V8100LTTI-5SL HM62V8100I-09 |
Wide Temperature Range Version 8 M SRAM (1024-kword 8-bit)
|
Renesas Electronics Corporation
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| EN29LV160AT-70BI EN29LV160AT-90BC EN29LV160AT-90BC |
Replaced by PTN78000W : 16兆位048K × 8 - 1024 kX6位）闪存
Replaced by PTN78000W : 12VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| MSM16911 |
1024 Bit Serial EPROM
1024-BIT SERIAL E-2 PROM
|
OKI electronic componets
|
| M440T1MV-15ZA9 M440T1MV |
3.3V, 32 Mbit (1024 Kbit x 32) TIMEKEEPER SRAM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| TH7888AVRHN TH7888AVRHRB |
Area Array CCD Image Sensor (1024 x 1024 Pixels with Antiblooming)
|
Atmel Corp.
|
| TH7887A |
Area Array CCD, 1024 X 1024 Pixels with Antiblooming, 4 x 20 MHz
|
Atmel
|
| S9737-01 S9737-03 |
CCD area image sensor 1024 1024 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Photonics
|
| SN28846DW |
<font color=red>[Old version datasheet]</font> 1024- × 1024-PIXEL CCD IMAGE SENSOR
|
TI store
|
| R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| CXK1012 CXK1012P |
1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
|
SONY[Sony Corporation]
|
